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| IRF730 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated | |||
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MOSFET
IRF730
N-channel mosfet transistor
INCHANGE
 Features
With TO-220 package
Simple drive requirements
Fast switching
V DSS=400V; RDS(ON)1.0 ;I
1.gate 2.drain 3.source
D=5.5A
 Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING UNIT
VDSS
Drain-source voltage (VGS=0)
400
V
VGS
Gate-source voltage
20
V
ID
Drain Current-continuous@ TC=25
5.5
A
Ptot
Total Dissipation@TC=25
74
W
Tj
Max. Operating Junction temperature
150
Tstg
Storage temperature
-65~150
 Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=0.25mA
RDS(ON) Drain-source on-stage resistance VGS=10V; ID=3.3A
IGSS Gate source leakage current
VGS=20V ;VDS=0
IDSS Zero gate voltage drain current VDS=400V; VGS=0
VSD Diode forward voltage
IF=5.5A; VGS=0
123
TO-220
MIN MAX UNIT
400
V
2
4
V
1.0
100
nA
25
uA
1.6
V
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