IRF645 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF645
·FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current: 10mA (Max.) @ V_DS = 250V
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
250
V
±20
V
I_D
Drain Current-Continuous
13
A
I_DM
Drain Current-Single Plused
52
A
P_D
Total Dissipation @T_C=25℃
125
W
T_j
Max. Operating Junction Temperature -55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
RθJA
Thermal Resistance,Junction to Case
Junction-to-Ambient
MAX UNIT
1.0
℃/W
80
℃/W
isc website：www.iscsemi.cn
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