IRF644 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF644
·FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current: 10mA (Max.) @ VDS = 250V
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
14
A
IDM
Drain Current-Single Plused
56
A
PD
Total Dissipation @TC=25℃
125
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
RJA
Junction-to-Ambient
MAX UNIT
1.0
℃/W
80
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}