IRF640N Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640N
DESCRIPTION
·Drain Current –ID= 18A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.15Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
18
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
62
℃/W
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