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| IRF640FI Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640FI
FEATURES
·Low RDS(on) = 0.180Ω(ï¨TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±20
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Pluse
40
A
PD
Total Dissipation @TC=25â
40
W
TJ
Max. Operating Junction Temperature
-55~150 â
Tstg
Storage Temperature
-55~150 â
isc websiteï¼www.iscsemi.cn
1 isc & iscsemi is registered trademark
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