IRF640A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Advanced Power MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF640A
FEATURES
·Low RDS(on) = 0.144Ω(TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±30
V
I_D
Drain Current-Continuous
18
A
I_DM
Drain Current-Single Pluse
72
A
P_D
Total Dissipation @T_C=25℃
139
W
T_J
Max. Operating Junction Temperature
-55~150 ℃
T_stg
Storage Temperature
-55~150 ℃
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