IRF635 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF635
DESCRIPTION
·Drain Current –I_D=6.5A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 250V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.68Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies
·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
250
V
±20
V
Drain Current-continuous@ TC=25℃
6.5
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
℃/W
℃/W
isc website：www.iscsemi.cn
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