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| IRF634 Datasheet, PDF (1/1 Pages) STMicroelectronics – N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET | |||
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MOSFET
IRF634
N-channel mosfet transistor
INCHANGE
 Features
With TO-220 package
Simple drive requirements
Fast switching
V DSS=250V; RDS(ON)0.45 ;I D=8.1A
1.gate 2.drain 3.source
 Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID
Drain Current-continuous@ TC=25
Ptot
Total Dissipation@TC=25
Tj
Max. Operating Junction temperature
Tstg
Storage temperature
RATING
250
20
8.1
74
150
-65~150
UNIT
V
V
A
W
 Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=0.25mA
RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.1A
IGSS Gate source leakage current
VGS=20V ;VDS=0
IDSS Zero gate voltage drain current VDS=250V; VGS=0
VSD Diode forward voltage
IF=8.1A; VGS=0
123
TO-220
MIN MAX UNIT
250
V
2
4
V
450 m
100
nA
25
uA
2.0
V
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