IRF632 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·RDS(on) =0.5Ω
·8A and 200V
·single pulse avalanche energy rated
·SOA is Power- Dissipation Limited
·Linear Transfer Characteristics
·High Input Impedance
isc Product Specification
IRF632
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Plused
32
A
PD
Total Dissipation @TC=25℃
75
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
80
℃/W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}