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| IRF630FI Datasheet, PDF (1/2 Pages) STMicroelectronics – N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·RDS(on) =0.4Ω
·6A and 200V
·single pulse avalanche energy rated
·SOA is Power- Dissipation Limited
·Linear Transfer Characteristics
·High Input Impedance
isc Product Specification
IRF630FI
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
V
±20
V
ID
Drain Current-Continuous
6
A
IDM
Drain Current-Single Plused
24
A
PD
Total Dissipation @TC=25â
35
W
Tj
Max. Operating Junction Temperature -55~150 â
Tstg
Storage Temperature
-55~150 â
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
â/W
â/W
isc websiteï¼www.iscsemi.cn
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