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IRF630F Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – N-channel mosfet transistor
MOSFET
IRF630F
N-channel mosfet transistor
‹ Features
With TO-220F package
Low on-stateand thermal resistance
Fast switching
V DSS=200V; RDS(ON)0.4 ;I D=9A
1.gate 2.drain 3.source
‹ Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID
Drain Current-continuous@ TC=25
Ptot
Total Dissipation@TC=25
Tj
Operating Junction temperature
Tstg
Storage temperature
RATING UNIT
200
V
20
V
9
A
35
W
150
-65~150
‹ Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=1mA
RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.4A
IGSS Gate source leakage current
VGS=20V ;VDS=0
IDSS Zero gate voltage drain current VDS=200V; VGS=0
VSD Diode forward voltage
IF=9A; VGS=0
INCHANGE
123
TO-220F
MIN MAX UNIT
200
V
2
4
V
400 m
100
nA
10 uA
1.2 V