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| IRF630B Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF630B
DESCRIPTION
·Drain Current âID= 9A@ TC=25â
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching Speed
APPLICATIONS
·Desinged for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for unin-
terrupted power supply and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25â
9
A
PD
Power Dissipation@TC=25â
72
W
Tj
Max. Operating Junction Temperature
150
â
Tstg
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.74
62.5
â/W
â/W
isc Websiteï¼www.iscsemi.cn
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