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| IRF630 Datasheet, PDF (1/1 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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MOSFET
IRF630
N-channel mosfet transistor
INCHANGE
 Features
With TO-220 package
Low on-state and thermal resistance
Fast switching
V DSS=200V; RDS(ON)0.4 ;I D=9A
1.gate 2.drain 3.source
 Absolute Maximum Ratings Tc=25
SYMBOL
VDSS
VGS
ID
Ptot
Tj
Tstg
PARAMETER
Drain-source voltage (VGS=0)
Gate-source voltage
Drain Current-continuous@ TC=25
Total Dissipation@TC=25
Max. Operating Junction temperature
Storage temperature
RATING
200
20
9
74
150
-65~150
UNIT
V
V
A
W
123
TO-220
 Electrical Characteristics Tc=25
SYMBOL
PARAMETER
V(BR)DSS Drain-source breakdown voltage
CONDITIONS
VGS=0; ID=0.25mA
VGS(TH) Gate threshold voltage
VDS= VGS; ID=1mA
RDS(ON) Drain-source on-stage resistance
VGS=10V; ID=5.4A
IGSS Gate source leakage current
VGS=20V ;VDS=0
IDSS
Zero gate voltage drain current
VDS=200V; VGS=0
VSD
Diode forward voltage
IF=9A; VGS=0
MIN MAX UNIT
200
V
2
4
V
400 m
100
nA
10
uA
1.2
V
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