IRF614A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Low RDS(on)
·VGS Rated at ±30V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
isc Product Specification
IRF614A
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
2.8
A
IDM
Drain Current-Single Plused
8.5
A
PD
Total Dissipation @TC=25℃
40
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.14 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
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