IRF611 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Low R_DS(on)
·V_GS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
isc Product Specification
IRF611
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
150
V
±20
V
I_D
Drain Current-Continuous
3.3
A
I_DM
Drain Current-Single Plused
8
A
P_D
Total Dissipation @T_C=25℃
43
W
T_j
Max. Operating Junction Temperature -55~175 ℃
T_stg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
2.9
℃/W
R_{th j-a} Thermal Resistance,Junction to Ambient
80
℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
PDF pdfFactory Pro
www.fineprint.cn