IRF610A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Advanced Power MOSFET

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF610A
FEATURES
·Low RDS(on) = 1.25Ω(TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
V_DSS
Drain-Source Voltage
V_GS
Gate-Source Voltage-Continuous
I_D
Drain Current-Continuous
I_DM
Drain Current-Single Pluse
P_D
Total Dissipation @T_C=25℃
T_J
Max. Operating Junction Temperature
T_stg
Storage Temperature
VALUE UNIT
200
V
±20
V
3.3
A
10
A
38
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
3.68
62.5
UNIT
℃/W
℃/W
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