IRF540N Datasheet, PDF (1/2 Pages) Intersil Corporation – 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF540N
·FEATURES
·Drain Current ID= 27A@ TC=25℃
·Static Drain-Source On-Resistance
: RDS(on) = 0.052Ω(Max)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous@ TC=25℃
27
ID
A
Drain Current-continuous@ TC=100℃
19
IDM
Drain Current-Single Plused
110
A
PD
Total Dissipation @TC=25℃
100
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.6
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
62
℃/W
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