IRF520FI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Typical R_DS(on) =0.23Ω
·Avalanche Rugged Technology
·High Current Capability
·Low Gate Charge
·175℃ Operating Temperature
isc Product Specification
IRF520FI
·DESCRITION
·High Current ,High Speed Switching
·DC-DC&DC-AC Converters
·Motor Control ,Audio Amplifiers
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
I_D
Drain Current-Continuous
7
A
I_DM
Drain Current-Single Plused
40
A
P_D
Total Dissipation @T_C=25℃
35
W
T_j
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.29
62.5
℃/W
℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
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