IRF520 Datasheet, PDF (1/2 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF520
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
9.2
A
IDM
Drain Current-Single Plused
37
A
PD
Total Dissipation @TC=25℃
60
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.5
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
80
℃/W
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