IRF4905 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
IRF4905
FEATURES
·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated
DESCRIPTION
·This benefit, combined with the fast switching speed and
ruggedized device .
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
-55
V
±20
V
I_D
Drain Current-Continuous
-74
A
I_DM
Drain Current-Single Pluse
-260
A
P_D
Total Dissipation @T_C=25℃
200
W
T_J
Max. Operating Junction Temperature
-55~175 ℃
T_stg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
0.75
62
UNIT
℃/W
℃/W
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