IRF460 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF460
DESCRIPTION
·Repetitive Avalanche Ratings
·Dynamic dv/dt Rating
·Hermetically Sealed
·Simple Drive Requirements
·Ease of Paralleling
APPLICATIONS
·Designed for applications such as switching power
Supplies ,motor controls ,inverters ,choppers ,audio
amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
500
V
±20
V
Drain Current-continuous@ TC=25℃
21
A
Total Dissipation@TC=25℃
300
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-A}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.42
30
℃/W
℃/W
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