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IRF431 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF431
DESCRIPTION
·silicon Gate for fast switching at elevate
·rugged
·low drive requirements
·ease of paralleling
APPLICATIONS
·high speed applications such as
Switching power supplies,AC and DCmotor controls
relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
450
V
±20
V
Drain Current-continuous@ TC=25℃
4.5
A
Total Dissipation@TC=25℃
75
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
℃/W
℃/W
isc website:www.iscsemi.cn
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