IRF423 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF423
DESCRIPTION
·silicon Gate for fast switching at elevate
·rugged
·low drive requirements
·ease of paralleling
APPLICATIONS
·high speed applications such as
Switching power supplies,AC and DCmotor controls
relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
450
V
±20
V
Drain Current-continuous@ TC=25℃
2.2
A
Total Dissipation@TC=25℃
50
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
2.5
℃/W
R_{th j-a} Thermal Resistance,Junction to Ambient
30
℃/W
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}
PDF pdfFactory Pro
www.fineprint.cn