IRF3710 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF3710
·FEATURES
·Drain Current –I_D=57A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 100V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 25mΩ(Max)
·DESCRITION
·Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based
on half bridge.
·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_DSS
V_GS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
V
±20
V
I_D
Drain Current-Continuous
57
A
I_DM
Drain Current-Single Plused
230
A
P_D
Total Dissipation @T_C=25℃
200
W
T_j
Max. Operating Junction Temperature -55~175 ℃
T_stg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.75
62
℃/W
℃/W
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