IRF360 Datasheet, PDF (1/2 Pages) International Rectifier – TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF360
DESCRIPTION
·silicon Gate for fast switching at elevate
·rugged
APPLICATIONS
·suited for applications such as
Switching power supplies,motor controls ,inverters,
Choppers,audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
400
V
±20
V
Drain Current-continuous@ TC=25℃
25
A
Total Dissipation@TC=25℃
300
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.42
30
℃/W
℃/W
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