IRF352 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF352
DESCRIPTION
·silicon Gate for fast switching at elevate
·rugged
APPLICATIONS
·high voltage,high speed applications such as off-line
Switching power supplies,AC and DCmotor controls
relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
400
V
±20
V
Drain Current-continuous@ TC=25℃
13
A
Total Dissipation@TC=25℃
150
W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
℃/W
℃/W
isc website：www.iscsemi.cn
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