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| IRF350 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF350
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speeds
·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature
·Rugged
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
400
V
±20
V
Drain Current-continuous@ TC=25â
15
A
Total Dissipation@TC=25â
150
W
Max. Operating Junction Temperature -55~150 â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-A
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
â/W
â/W
isc websiteï¼www.iscsemi.cn
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