IRF3205 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A⑤)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF3205
FEATURES
·Drain Current –I_D= 110A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 55V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.008Ω(Max)
Description
Advanced HEXFET ® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
55
V
±20
V
ID
Drain Current-Continuous
110
A
IDM
Drain Current-Single Pluse
390
A
PD
Total Dissipation @TC=25℃
200
W
T_J
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.75 ℃/W
62 ℃/W
isc website： www.iscsemi.com
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