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| IRF257 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Nanosecond Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF257
DESCRIPTION
·Drain Current ID=20A@ TC=25â
·Drain Source Voltage
: VDSS= 275V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.17Ω(Max)
·Nanosecond Switching Speed
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
275
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25â
20
A
Total Dissipation@TC=25â
150
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83
30
â/W
â/W
isc websiteï¼www.iscsemi.cn
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