IRF237 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Nanosecond Switching speeds

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF237
DESCRIPTION
·Drain Current I_D=6.5A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 275V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) =0.68Ω(Max)
·Nanosecond Switching speeds
APPLICATIONS
·Switching power supplies
·Switching converters,motor driver,relay driver
·Drivers for high-power bipolar switching transistors
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
275
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ T_C=25℃
6.5
A
Total Dissipation@T_C=25℃
75
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
℃/W
℃/W
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