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IRF225 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Speed Applications | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF225
DESCRIPTION
·Drain Current ID=3.3A@ TC=25â
·Drain Source Voltage-
: VDSS= 250V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =1.5Ω(Max)
·High Speed Applications
APPLICATIONS
·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
250
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25â
3.3
A
Total Dissipation@TC=25â
40
W
Max. Operating Junction Temperature
150
â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.12
30
â/W
â/W
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