IRF150 Datasheet, PDF (1/2 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF150
DESCRIPTION
·Drain Current I_D=40A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 100V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) =0.055Ω(Max)
·High Power,High Speed Applications
APPLICATIONS
·Switching power supplies
·UPS
·Motor controls
·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
100
V
±20
V
Drain Current-continuous@ TC=25℃
40
A
Total Dissipation@TC=25℃
150
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
0.83 ℃/W
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