IRF141 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – High Power,High Speed Applications

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF141
DESCRIPTION
·Drain Current I_D=27A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 60V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) =0.085Ω(Max)
·High Power,High Speed Applications
APPLICATIONS
·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL ARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
60
V
±20
V
Drain Current-continuous@ TC=25℃
27
A
Total Dissipation@TC=25℃
125
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
30
℃/W
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