IRF1404 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A⑥)

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF1404
FEATURES
·Drain Current –I_D= 162A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 40V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) = 0.004Ω(Max)
·Fast Switching
Description
Seventh Generation HEXFET ® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
40
V
±20
V
ID
Drain Current-Continuous
162
A
IDM
Drain Current-Single Pluse
650
A
PD
Total Dissipation @TC=25℃
200
W
T_J
Max. Operating Junction Temperature
175
℃
T_stg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.75 ℃/W
62 ℃/W
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