IRF123 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Nanosecond Switching Speeds

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF123
DESCRIPTION
·Drain Current I_D=7A@ T_C=25℃
·Drain Source Voltage-
: V_DSS= 60V(Min)
·Static Drain-Source On-Resistance
: R_DS(on) =0.4Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Motor controls,Inverters and Choppers
·Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_DSS
V_GS
I_D
P_tot
T_j
T_stg
Drain-Source Voltage (V_GS=0)
Gate-Source Voltage
60
V
±20
V
Drain Current-continuous@ TC=25℃
7
A
Total Dissipation@T_C=25℃
40
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
30
℃/W
℃/W
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