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HG4N60-220F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel Mosfet Transistor | |||
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Drain Current âID= 4A@ TC=25â
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·High efficiency switch mode power supply.
Charger
UPS power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Plused
PD
Total Dissipation @TC=25â
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
isc Product Specification
HG4N60
VALUE
600
±30
4
16
75
150
-55~150
UNIT
V
V
A
A
W
â
â
isc websiteï¼ www.iscsemi.com
1 isc & iscsemi is registered trademark
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