HG2N60-220F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – N-Channel Mosfet Transistor

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Drain Current –ID= 2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·High efficiency switch mode power supply.
Charger
UPS power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Plused
PD
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
isc Product Specification
HG2N60
VALUE
600
±30
2
6
50
150
-55~150
UNIT
V
V
A
A
W
℃
℃
isc website： www.iscsemi.com
1 _{isc & iscsemi is registered trademark}