HBR20200CT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

Schottky Barrier Rectifier
FEATURES
·Common Cathode Structure
·Low Power Loss,high Efficiency
·High Operating Junction Temperature
·Guarding for Overvoltage protection，High reliability
·100% avalanche tested
·RoHS product
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
HBR20200CT
APPLICATIONS
·High Frequency switch power Supply
·Free wheeling diodes and polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
200
V
IF(AV)
Average Rectified Forward Current (Per Leg)
(Total)
10
20
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed on
190
A
rated load conditions
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-40~150 ℃
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