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FRM450 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Second Generation Rad Hard MOSFET Results | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRM450
DESCRIPTION
·10A, 500V, RDS(on) = 0.6Ω
·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS
It is specially designed and processed to
exhibit minimal characteristic changes to total dose and neutron
exposures. Design and processing efforts are also directed to
enhance survival to heavy ion (SEE) and/or dose rate
(GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37â
10
A
Total Dissipation@TC=25â
150
W
Max. Operating Junction Temperature -55~150 â
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.83 â/W
30 â/W
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