FQP33N10 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET

INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQP33N10
·FEATURES
·Low RDS(on)
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for low voltage applications such as
Audio amplifier,high efficiency switching DC/DC converters,
and DC motor control.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
33
A
IDM
Drain Current-Single Plused
132
A
PD
Total Dissipation @TC=25℃
127
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.18 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
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