FC4228 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN RF Power Transistor

INCHANGE Semiconductor
isc Silicon NPN RF Power Transistor
isc Product Specification
FC4228
DESCRIPTION
·High power gain:︱S21e︱2 =5.5dB@ VCE=3V，IC=5mA，f=2GHz
·Low noise:NF=2dB
@ VCE=3V，IC=5mA，f=2GHz
·Gain bandwidth product: fT=8GHz @ VCE=3V，IC=5mA，f=2GHz
·With SOT-323 Package
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for low noise amplifier at VHF,UHF and CATV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
Pc
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
35
mA
150
mW
150
℃
Tstg
Storage Temperature Range
-65--150 ℃
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