D45H11 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45H11
DESCRIPTION
·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
·Fast Switching Speeds
·Complement to Type D44H11
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for general pourpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
-20
A
50
W
-55~150 ^℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W
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