D45H Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45H Series
DESCRIPTION
·Low Saturation Voltage
·Fast Switching Speeds
·Complement to Type D44H Series
APPLICATIONS
·Designed for general pourpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEO
Collector-Emitter
Voltage
D45H8
-60
V
D45H10,11
-80
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-10
A
I_CM
Collector Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-20
A
-50
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
2.5 ℃/W
Thermal Resistance,Junction to Ambient 75 ℃/W
isc Website：www.iscsemi.cn