D45C7 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
D45C7
DESCRIPTION
·Low Saturation Voltage
·Good Linearity of h_FE
·Fast Switching Speeds
·Complement to Type D44C7
APPLICATIONS
·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage
-70
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-4
A
I_CM
Collector Current-Peak
-6
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-1
A
30
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
4.2 ℃/W
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