D44TD3 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 300V(Min)- D44TD3
= 350V(Min)- D44TD4
= 400V(Min)- D44TD5
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for switching regulators, high resolution deflection
circuits, inverters and motor drivers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEV
Collector-Emitter
Voltage
D44TD3
400
D44TD4
500
V
D44TD5
600
V_CEO
Collector-Emitter
Voltage
D44TD3
300
D44TD4
350
V
D44TD5
400
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
4
A
I_CM
Collector Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
8
A
50
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.56 ℃/W
isc Product Specification
D44TD3/4/5
isc Website：www.iscsemi.cn