D44T3 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44T3/4
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 300V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CES
Collector-Emitter Voltage
V_BE=0
400
V_CEO
Collector-Emitter Voltage
300
UNIT
V
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
2
A
I_CM
Collector Current-Peak
4
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
0.5
A
31.2
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
4 ℃/W
isc Website：www.iscsemi.cn