D44Q1 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44Q1/3/5
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 125V(Min)- D44Q1
= 175V(Min)- D44Q3
= 225V(Min)- D44Q5
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
D44Q1
200
V_CBO
Collector-Base Voltage
D44Q3
250
V
D44Q5
300
D44Q1
125
V_CEO
Collector-Emitter Voltage D44Q3
175
V
D44Q5
225
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
Collector Power Dissipation
P_C
@ T_a=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
4
A
31.25
W
1.67
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
4
R_{th j-a} Thermal Resistance, Junction to Ambient 75
℃/W
℃/W
isc Website：www.iscsemi.cn