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D44D1 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistors
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistors
D44D1/2/3/4/5/6
DESCRIPTION
·High DC Current Gain-hFE= 2000(Min)@ IC= 1A
·Complement to Type D45D1/2/3/4/5/6
APPLICATIONS
·Designed for use in power linear and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
D44D1
D44D2
VCEV
Collector-Emitter
Voltage
D44D3
-60
V
D44D4
-80
D44D5
-100
D44D6
-120
D44D1
D44D2
VCEO
Collector-Emitter
Voltage
D44D3
-60
V
D44D4
-80
D44D5
-100
D44D6
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IBB
Base Current-Continuous
-0.5
A
PC
Collector Power Dissipation@TC=25℃
125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc Website:www.iscsemi.cn