D44C1 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
D44C1
DESCRIPTION
·Low Saturation Voltage
·Good Linearity of h_FE
·Fast Switching Speeds
·Complement to Type D45C1
APPLICATIONS
·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCES Collector-Emitter Voltage
40
V
VCEO Collector-Emitter Voltage
30
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
1
A
30
W
150
℃
T_stg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
4.2 ℃/W
isc website：www.iscsemi.cn
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