CYNB25-800 Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – isc Thyristors

INCHANGE Semiconductor
isc Thyristors
isc Product Specification
CYNB25-800
 DESCRIPTION
·Electrically Non-isolated package
·High Vdrm and Vrrm.
·High temperature stability.
APPLICATIONS
·It is suitable to fit all modes of control applications.
such as Solid State Relays,Heating controller,Phased
circuits,motor control circuits in electric tools and cleaner.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average on-stage current
IT(RMS) RMS on-state current
I²t
I²t Value for fusing tp=10ms
PG(AV) Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
TC=80℃
TC=105℃
Tj=125℃
MIN
800
800
25
250
576
1
-40~125
-40~150
UNIT
V
V
A
A
A²S
W
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM Repetitive peak reverse current VRM=VRRM, ,
IDRM Repetitive peak off-state current VDM=VDRM,
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
VTM On-state voltage
ITM= 32A
VGD No trigger voltage
Tj=125℃
IGT
Gate-trigger current
VD= 12V; RL=30Ω
VGT Gate-trigger voltage
VD= 12V; RL=30Ω
IH
Holding current
IT= 0.5A; Gate Open
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
5 μA
1 mA
5 μA
1 mA
1.6 V
0.2
V
40 mA
1.5 V
60 mA
1.25 ℃/W
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